14 June 2011

Integra announces GaN-on-SiC devices for L-band avionics

At last week’s IEEE MTT-S International Microwave Symposium (IMS 2011) in Baltimore, MD (5–10 June), Integra Technologies Inc (ITI) of El Segundo, CA, USA, which supplies high-power pulsed RF transistors, announced the development of two gallium nitride on silicon carbide (GaN-on-SiC) devices for the L-band market.

Intended for commercial avionics applications (including IFF, TACAN and DME), the IGN0912L500 operates over the instantaneous bandwidth covering 950–1250GHz in the L-band frequency range. Characterized with a pulse train of 444 x (7µs ON, 6µs OFF) with 22.7% LTDC, the IGN0912L500 typically supplies a minimum of 500W of peak output power. The device provides more than 12dB of gain and 62% efficiency.

The IGN1214L500 operates over the instantaneous bandwidth covering 1.2–1.4GHz in the L-band frequency range. Intended for L-band radar applications that device is characterized under 1ms and 10% duty-cycle conditions and supplies more than 500W of output power while providing 13dB of gain and 60% efficiency.

The single-ended devices are housed in a ceramic flanged package providing excellent thermal advantages over plastic packaged devices, it is claimed.

The IGN0912L500 and IGN1214L500 will be available for sampling in third-quarter 2011.

Tags: Integra L-band avionics

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