8 June 2011

Toshiba expands GaN HEMT range with 25W PA for extended Ku-band satcom

In booth 2306 at this week’s IEEE MTT-S International Microwave Symposium (IMS 2011) in Baltimore, MD, USA (7–9 June), Toshiba America Electronic Components Inc (TAEC) and its parent company Toshiba Corp of Japan added to its power amplifier product family by launching the TGI1314-25L, a gallium nitride (GaN) high-electron-mobility transistor (HEMT) targeted at Ku-band satellite communication applications including very small aperture terminals (VSAT).

Operating in the Extended Ku-band 13.75–14.5GHz frequency range with output power of 25W, the TGI1314-25L has output power of 44.0dBm (typical) with 39dBm input power, linear gain of 8.0dB (typical) and drain current of 2.5A (typical).

The latest product follows Toshiba in 2009 launching the TGI1314-50L (now in mass production), operating in the Extended Ku-band (13.75–14.5GHz) for satcoms to support solid-state power amplifiers (SSPA) applications.

“The expansion of Toshiba's GaN power amplifier family brings higher gain and very efficient features to microwave designers, which reduce heat-sink requirements and enable smaller terminals and converters with a full GaN HEMT line-up that includes drivers,” says Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC’s Discrete business unit.  “Since Toshiba released its 50W Ku-band product a few years ago, many customers have requested a full line-up of GaN HEMTs, which will simplify the power supply design of solid-state power amplifiers (SSPA) and block up-converters (BUC),” he adds. “In addition, small output power applications, such as VSAT, can benefit from GaN HEMTs, making fan-less or very small equipment possible.” 

Samples of the TGI1314-25L will be available in third-quarter 2011, with mass production scheduled for fourth-quarter 2011. 

Tags: Toshiba GaN HEMT Ku-band satcom

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