22 November 2011

GigOptix adds 30GHz GaAs MMIC distributed PA to wideband microwave portfolio

GigOptix Inc of San Jose, CA, USA (which supplies semiconductor and optical components including modulator and laser drivers and transimpedance amplifier ICs based on III-V materials) has expanded its monolithic-microwave integrated circuit (MMIC) power amplifier (PA) line with the addition of the iT2012, a 0.25W wideband distributed power amplifier for military electronic warfare (EW), radar, test & measurement equipment, and broadband telecom equipment applications. The amplifier augments GigOptix’s broad line of power amplifiers with frequency coverage extending up to 90GHz.

Key features of the iT2012 include:

  • wide bandwidth performance from DC to 30GHz;
  • internally matched RF input and outputs to 50 Ohms;
  • up to +26dBm typical saturated output power up to 15GHz and higher than 22dBm up to 30GHz;
  • 35dBm typical output IP3 while operating with typical drain voltages of +8VDC;
  • supply current of 220mA from a +8V supply; and
  • small-signal gain of 16dB typical with a gain flatness of ±0.5 dB across band.

The iT2012 is GigOptix’s first new microwave product since its acquisition in June of San Jose-based Endwave Corp (a designer and manufacturer of high-frequency RF solutions and semiconductor products for the wireless mobile backhaul communications, satellite communications, electronic instruments, and defense and security markets). “We have blended the skill sets of both design groups,” says chief technology officer Andrea Betti-Berruto. “This product release further demonstrates our successful and synergistic integration under the GigOptix umbrella,” he adds.

The iT2012 is available in bare die form and is designed to enable straightforward integration into subsystems and multi-chip modules (MCMs) by requiring few extra components for bias decoupling. Engineering samples are available.

Tags: GigOptix GaAs MMIC

Visit: www.gigoptix.com

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