14 November 2011

M/A-COM Tech showcases new products at MILCOM

At the MILCOM 2011 tradeshow in Baltimore last week, M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) showcased its portfolio of new products suitable for military communications.

Product solutions on display included:

  • gallium nitride on silicon carbide (GaN-on-SiC) transistors and higher-level pallet amplifiers (powered by a proprietary 0.5 micron HEMT design).
  • a family of surface-mount voltage-controlled oscillators (VCOs) supporting applications from 45MHz to 4GHz (joining its range of diodes, transistors, MMICs, and passive products), providing a comprehensive solution set for military radio communications.
  • modules with a small, compact footprint, up to 25dB gain, and 50 ohm input/output, as well as pallets designed for CW or pulsed applications (allowing gate biasing and sequencing for GaN on SiC designs).
  • the HMIC high-power SPDT switch family, including the new 80-Watt MASW-000932 in a surface-mount 4mm PQFN package, offering wideband performance from 1MHz to 4000MHz with high isolation-to-loss ratio for both TX and RX states (suiting high-power military radio applications as well as LTE, TD-SCDMA and WiMAX applications).
  • the MADR-010574, a 250V PIN diode driver that features CMOS ASIC technology in a small 7mm PQFN plastic package (with bias current up to 170mA, it biases four diodes simultaneously, and supports series-shunt architectures, offering high power-handling capability for military communication and public safety radios).

Tags: M/A-COM GaN-on-SiC

Visit: www.milcom.org

Visit: www.macomtech.com

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