1 November 2011

RFMD launches 50-1000MHz, 15W GaN wideband PA

RF Micro Devices Inc of Greensboro, NC, USA has launched the RFHA1000 GaN power IC (PIC), a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, power amplifier stages for commercial wireless infrastructure, civilian and military radar, two-way public mobile radio, and general-purpose Tx amplification.

Using a high-power-density gallium nitride (GaN) high-electron-mobility transistor (HEMT) process, the amplifier achieves high power-added efficiency of 60%, and flat gain (17dB) and output power (15W) over a large instantaneous bandwidth of 50-1000MHz in a single amplifier design.

Operating at 28V, the GaN discrete amplifier is internally input-matched to 50Ω, and packaged in a small-form-factor (5mm x 6mm) SOIC-8 outline air-cavity ceramic package that provides what is claimed to be excellent thermal stability through the use of advanced heat-sink and power dissipation technologies.

Ease of integration is accomplished through the incorporation of an optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Large-signal models are also available.  

Tags: RFMD GaN GaN PA

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