- News
7 October 2011
Powerex launches low-profile split dual Si/SiC hybrid IGBT modules
Combining its NFH-Series silicon-based insulated-gate bipolar transistor (IGBT) with a Zero Recovery silicon carbide (SiC) Schottky diode, Powerex Inc of Youngwood, PA, USA is now offering split dual Si/SiC hybrid IGBT modules (the QID1210005 and QID1210006) designed for high-frequency applications (upwards of 30kHz for hard switching and 60–80kHz for soft switching).
In January, the US Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E) awarded a $5.15m, three-year grant to fund SiC power device development, with the bulk going to project leader Cree Inc of Durham, NC (which makes SiC power devices), along with partners Powerex, high-power semiconductor manufacturers ABB Ltd of Zurich, Switzerland, and North Carolina State University (NCSU).
Each of the new modules consists of two IGBTs, with each transistor having a reverse-connected Zero Recovery free-wheel SiC Schottky diode, yielding a 30% decrease in switching losses. All components and interconnects are isolated from the heat-sinking baseplate, offering simplified system assembly and thermal management.
The QID1210005 and QID1210006 have a very low profile and can be easily reconfigured, says Powerex. In total, five different configurations are possible: independent; as a dual; in parallel; common collector; and common emitter.
Rated at 100A/1200V, the QID1210005 and QID1210006 feature: a low ESW (off); aluminum nitride isolation; and a low internal inductance. The QID1210005 has a copper baseplate, and the QID1210006 has an AlSiC baseplate for extended thermal cycle life.
The hybrid modules can be used in applications including: energy-saving power systems such as fans, pumps and consumer appliances; high-frequency-type power systems such as uninterruptible power supplies (UPS), high-speed motor drives, induction heating, welders and robotics; and high-temperature power systems such as power electronics in electric vehicle and aviation systems.
The split dual Si/SiC hybrid IGBT modules can be used with standard Powerex NFH gate drivers.
Powerex Si/SiC hybrid IGBT modules




 ©2006-2012
    Juno Publishing and Media Solutions Ltd. All rights reserved. Semiconductor
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    the copyright of Juno Publishing and Media Solutions Ltd. Reproduction in
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©2006-2012
    Juno Publishing and Media Solutions Ltd. All rights reserved. Semiconductor
    Today and the editorial material contained within it and related media is
    the copyright of Juno Publishing and Media Solutions Ltd. Reproduction in
    whole or part without permission from Juno Publishing and Media Solutions
    Ltd is forbidden. In most cases, permission will be granted, if the magazine
    and publisher are acknowledged.