17 October 2011

WIN releases PP15-50/PP15-51 next-gen 0.15μm power PHEMT process  

Taiwan’s WIN Semiconductors Inc (the world’s largest pure-play gallium arsenide foundry) has released the PP15-50/PP15-51 next-generation 0.15 micron pseudomorphic high-electron-mobility transistor (PHEMT) process for high-frequency power products operating at up to 6V. 

The PP15-50 and PP15-51 technologies use an optimized device structure and a proven 150mm manufacturing process to provide performance through 40GHz. The process is an extension to WIN’s PP15 technology platform, and demonstrates a cut-off frequency fT of more than 80GHz and power density of 850mW/mm at 29GHz, with more than 10dB of gain and 50% power-added efficiency (PAE).

The process is designed to operate at a drain bias of 6V, and exhibits typical breakdown voltages of 16V, with a process minimum of 14V, providing substantial operating margin for ultra-high product reliability.

WIN says that the technology is suited to a range of products including saturated and linear amplifiers for the point-to-point market, radar, instrumentation, electronic warfare (EW), and optical driver applications. 

Furthermore, the platform is available on 50 microns (PP15-50) and 100 microns (PP15-51) substrate thicknesses, with optional BCB scratch protection.

Process design kits (PDKs) for Agilent’s ADS and AWR’s Microwave Office will be available on WIN’s website. Active device samples are available now.

Tags: WIN Semiconductors PHEMT

Visit: www.winfoundry.com

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