26 April 2012

RFMD unveils 900V-breakdown high-voltage GaN process

RF Micro Devices Inc of Greensboro, NC, USA has extended its gallium nitride (GaN) process technology portfolio to include a new technology optimized for high-voltage power devices in power conversion applications.

The firm claims that the rGaN-HV process enables substantial system cost and energy savings in power conversion applications ranging from 1 to 50kW. It delivers device breakdown voltages up to 900V, high peak current capability, and ultra-fast switching times for GaN power switches and diodes.

The new technology complements RFMD’s GaN 1 process (which is optimized for high-power RF applications and delivers high breakdown voltage over 400V) and the GaN 2 process (which is optimized for high-linearity applications and delivers high breakdown voltage over 300V). RFMD will manufacture discrete power device components for customers as well as providing access to rGaN-HV to external foundry customers for their customized power device solutions.

“The global demand for energy savings through improved power conversion efficiency is creating a tremendous opportunity for high-performance power devices based on RFMD's GaN power process technologies,” says president & CEO Bob Bruggeworth. We expect our newest GaN power process will expand our opportunities in the high-voltage power semiconductor market,” he adds.

RFMD’s Power Conversion Devices Product Line and Foundry Services business unit will exhibit a broad portfolio of GaN technologies and GaN power products at the PCIM Europe 2012 (Power Conversion Intelligent Motion) event in Nuremberg, Germany (8–10 May).

Tags: RFMD GaN

Visit: www.rfmd.com/products/powerconversion

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