19 April 2012

Riber and TRUMPF collaborating on epi processes for next-gen high-power lasers

Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has signed an agreement with Germany-based TRUMPF to collaborate on epitaxy process technologies for next-generation III-V high-power laser devices. This follows process qualification at the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) of Berlin, Germany.

In the quest for higher power and increased life-time of semiconductor lasers within TRUMPF’s semiconductor program, high-power laser component maker TRUMPF Photonics Inc of Cranbury, NJ, USA (formerly part of Princeton Lightwave Inc, before acquisition by industrial laser manufacturing subsidiary TRUMPF Inc of Farmington, CT) – together with its partners - is exploring facet passivation processes to prolong the life of semiconductor lasers at higher power densities. Together with Riber, efficient passivation techniques for gallium arsenide (GaAs) facets will be tackled.

The facet passivation process is implemented through both high-quality MBE and the capability to handle substrates for bar-based lasers. Riber’s MBE412 system, sold to TRUMPF, allows for ultra-high-vacuum conditions and delivers processed wafers automatically and rapidly, it is claimed.

Tags: Riber MBE GaAs Lasers TRUMPF

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Visit: www.trumpf.com

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