14 August 2012

Taiwan’s National Central University orders Aixtron reactor to develop GaN-on-Si power devices

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that it has received an order from existing customer National Central University (NCU) in Taiwan for a 1x6” wafer Close Coupled Showerhead metal-organic chemical vapor deposition (MOCVD) system. The reactor will be dedicated to the growth of gallium nitride (GaN) epitaxial structures on 6-inch silicon substrates, for use in R&D on power management devices.

Aixtron’s local support team has installed and commissioned the new reactor at NCU’s Microwave and Optoelectronic Devices Laboratory.

“Demand for low-cost GaN-based power devices in high-efficiency and high-power systems continues to increase,” says Jen-Inn Chyi, chair professor of Electrical Engineering at NCU. “To satisfy this need we therefore plan to transfer our specially developed semiconductor materials technology to industry, for a pilot initially, and then for large-scale production. This system is an excellent match for the heteroepitaxial growth of gallium nitride structures on large-area silicon wafers, with a view to providing high-performance devices as cost-efficiently as possible.”  

See: Aixtron Company Profile

Tags: Aixtron MOCVD GaN-on-Si Power devices

Visit: www.ee.ncu.edu.tw

Visit: www.aixtron.com