3 August 2012

RFMW design and sales support for TriQuint’s TQP7M9106 2W high-linearity amplifier

RF and microwave component distributor RFMW Ltd of San Jose, CA, USA has announced design and sales support for the TQP7M9106, a high-linearity driver amplifier with frequency coverage from 50MHz to 1.5GHz made by RF front-end product maker TriQuint Semiconductor Inc of Hillsboro, OR, USA.

At 0.9GHz, the TQP7M9106 offers gain of 20.8dB, ultra-high output IP3 (OIP3) of 50dBm, and compressed 1dB power of +33dBm, while drawing just 455mA of current from a 5V supply.

Internal circuitry allows the amplifier to offer 'Class A' linearity performance with 'Class AB' efficiency. The TQP7M9106 contains added patented features implemented on-chip that differentiates it from other products in the market, RFMW claims. It also contains RF overdrive protection, and internal active bias allows it to operate from a 5V supply, while also providing DC overvoltage protection from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 1C HBM ESD rating.

Available in an industry-standard, lead-free RoHS-compliant, 4mm x 4mm QFN surface-mount package, the device suits applications such as 3G/4G wireless infrastructure, small-cell base-station transceivers (BTS), boosters, high-power amplifiers, repeaters, defense communications, and general wireless applications in the 50-1500MHz frequency range.

The TQP7M9106 is part of a family of QFN 4mm x 4mm packaged highly linear amplifiers that includes the TQM7M9104, which pushes the high-end frequency to 4GHz. Evaluation boards are available for qualified applications.  

Tags: TriQuint

Visit: www.rfmw.com