CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

24 December 2012

Riber sells MBE system for II-VI-based IR sensor growth in US

Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has sold an MBE 412 system to a “leading expert company in IR imaging sensors materials for ground- and space-based astronomy”.

Designed for developing II-VI semiconductors, the MBE412 was selected since the platform is optimized for applications where the highest performance for complex semiconductor heterostructures layers is required, says Riber.

The order is repeat business, adds the firm, and will enable the customer to further increase its activities involving new infrared sensor materials and structures.

Tags: Riber MBE II-VI

Visit: www.riber.com

Share/Save/Bookmark
See Latest IssueRSS Feed

 

This site uses some harmless cookies in order to function click here to view our Cookie and Privacy Policy