2 February 2012

EPC publishes first application-focused GaN transistors textbook

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, has announced the publication of a textbook designed to provide power system design engineers with basic technical and application-focused information on how to design more efficient power conversion systems using GaN-based transistors.

“This book will help designers to understand the exceptional benefits of GaN technology and the intricacies of working with GaN transistors in power conversion systems,” comments Sam Davis, editor-in-chief of Power Electronics Technology magazine. “It will set the stage for a new era in power electronics applications that surpass everything that came before it,” he adds.

EPC says that the practical guide provides guidance on the use of GaN transistors in widely used power electronics applications, ranging from buck converters to Power over Ethernet. Also included are discussions on fundamental power engineering subjects such as: performance characteristics of GaN transistors, layout considerations for GaN circuits, paralleling GaN transistors and driver IC requirements for GaN transistors. The final chapters address GaN device reliability, their exceptional radiation-resistant characteristics as well as their future in power electronics.

“Gallium nitride transistors provide a long-awaited displacement technology for MOSFETs, and much has been learned over the past several years about how to apply this new technology,” says CEO Dr Alex Lidow (co-author of the book). “In addition to increasing the efficiency of today's power conversion systems, GaN transistors open up new applications such as RF envelope tracking and wireless power transmission that are much needed to keep pace with the ever-expanding communications industry and battery operated products,” he adds. “These new applications are enabled by the high-frequency switching capability combined with the high-voltage and high-power capabilities of gallium nitride FETs.” 

The four authors, Alex Lidow, Michael DeRooij, Johan Strydom and Yanping Ma, work for EPC, which claims to be the first firm to introduce enhancement-mode GaN transistors. Collectively the authors have more than 90 years experience working in power transistor design and application. All four have doctorates in scientific disciplines and are already published authors. Lidow concentrates on transistor process design, Drs DeRooij and Strydom focus on power transistor applications, and Dr Ma provides expertise on quality assurance and reliability.

‘GaN Transistors for Efficient Power Conversion’ is available for $39.95 via www.amazon.com, EPC’s distributor DigiKey (www.digikey.com) and EPC’s web-site.

Tags: EPC E-mode GaN FETs

Visit: www.epc-co.com

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