27 February 2012

RFMD announces multimode reference design win for 2nd-generation ultra-high-efficiency PAs

RF Micro Devices Inc of Greensboro, NC, USA has secured a reference design win for its second-generation ultra-high-efficiency family of power amplifiers. The new reference design win is on a highly integrated multimode multi-band 3G/LTE solution.

RFMD is expanding its relationship with the “leading chipset supplier” to include its ultra-high-efficiency 3G/4G power amplifiers, says Eric Creviston, president of RFMD’s Cellular Products Group (CPG). “RFMD is already supporting our mutual customers with high-performance 3G/4G switches and switch-based products, and we are enthusiastic about the incremental growth opportunities presented by our increasing participation on 3G and LTE reference designs,” he adds.

RFMD claims that its second-generation ultra-high-efficiency 3G and 4G LTE PAs extend battery life and reduce the thermal impact of data usage in smartphones. The product family currently covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 4, 7, 11, 13, 17, 18, 20, and 21, addressing the most common UMTS/HSPA+ and LTE frequency bands and band combinations. Additional multimode, multi-band (MMMB) and single-mode LTE variants will be introduced in first-half 2012.

RFMD says that it offers a broad portfolio of 3G and 4G LTE solutions in single-mode and converged architectures to ensure alignment with leading chipset providers and enable worldwide network compatibility. Its 3G and 4G LTE product portfolio reduces the thermal impact of data usage in smartphones while enabling increased battery life during data-centric applications, such as web surfing, video calls and internet radio services, the firm adds.

Tags: RFMD PAs

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