7 February 2012

SemiSouth announces demo board showcasing SiC JFETs in cascode half-bridge configuration

SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide devices and electronics for high-power, high-efficiency, harsh-environment power management and conversion applications) has announced a demonstration board showing the operation of its SiC junction field-effect transistors (JFETs) in a cascode half-bridge configuration.

Enabling a quick evaluation of the SJDP120R085 JFET, the demo board platform is suitable for applications including boost, buck, inverter and PSU half-bridge power-stage designs. In the cascode configuration, the JFET is driven via a source-connected MOSFET, allowing existing, commercially available MOSFET drivers to be used.

Normally-on SJDP120R085 1200V power JFETs enable high-speed switching, are compatible with standard gate drive circuitry, and feature a positive temperature coefficient for ease of paralleling, says SemiSouth. The JFETs have a high saturation current (27A), low on-resistance per unit area (85mΩ max), and improved switching performance.

The demo board comes complete with Gerber files and a BOM to allow users to build their own circuits. “Our SiC JFETs have industry-leading performance,” claims VP of sales & marketing Dieter Liesabeths, “and we are committed to supporting them with the best available design tools.”

Tags: SemiSouth SiC JFETs

Visit: www.semisouth.com

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