8 February 2012

SemiSouth launches 1200V normally-on SiC JFET with ultra-low switching losses

SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide devices and electronics for high-power, high-efficiency, harsh-environment power management and conversion applications) has launched the SJDP120R340, a normally-on SiC trench junction field-effect transistor (JFET) that, compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses.

Rated at 1200V with a maximum on-state resistance of 340mΩ (typical RDS,on of 270mΩ), these new devices feature a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150°C. Key applications include photovoltaic microinverters, SMPS (switched-mode power supplies) and UPS (uninterruptible power supplies), motor drives, and induction heating.

“Because of the small die size and our compact device design, the new SJDP120R340 normally-on SiC trench JFETs are very cost-effective,” says director of sales Dieter Liesabeths.

Samples are available today. Volume production is set to begin in second-quarter 2012, with pricing below $7 in quantities of 1000.

Tags: SemiSouth SiC JFETs

Visit: www.semisouth.com

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