18 July 2012

Hittite launches high-gain, high-linearity 2W 9-14GHz PAs with on-chip power detectors for X-band applications

Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched two new, 2 Watt gallium arsenide pseudomorphic high-electron-mobility transistor (GaAs pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers. Covering the 9-14GHz frequency range, the new devices suit microwave radio, military and space, SatCom and test & measurement applications, says the firm.

The HMC952 and HMC952LP5GE are four-stage GaAs pHEMT MMIC 2W medium-power amplifiers with temperature-compensated on-chip power detectors operating between 9GHz and 14GHz. The amplifiers provide 33dB of gain, +35dBm of saturated output power, and 27% of power-added efficiency (PAE) from a +6V supply. With up to +43dBm output IP3, the HMC952LP5GE suits high-linearity applications in military and space applications as well as high-capacity point-to-point and point-to-multi-point radios.

The amplifiers also feature I/Os that are internally matched to 50 Ohms and require no external matching components, making them suitable for use as drivers or as the final power stage in a microwave transmitter chain.

Hittite says that the HMC952 die can be easily incorporated into multi-chip modules (MCMs), while the HMC952LP5GE leadless QFN 5mm x 5mm surface-mount packaged version is compatible with high-volume assembly equipment.

Both amplifer versions are a much smaller alternative to bolt-down power amplifier solutions, says the firm, and complement Hittite’s range of active and passive components for microwave and millimeter-wave radio applications.

Tags: Hittite GaAs pHEMT

Visit: www.hittite.com

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