12 July 2012

PAM-XIAMEN expands free-standing SI GaN substrate range to 2” square; 3” & 4” round substrates in development

China’s Xiamen Powerway Advanced Material Co Ltd (PAM-Xiamen), which supplies ultra-high purity crystalline gallium nitride (GaN) and aluminium gallium nitride (AlGaN) materials and other related products and services, has announced the availability of 2”-diameter native semi-insulating GaN (SI GaN) substrates. The firm says that the new product represents a natural addition to its native SI GaN substrate product line, which already includes 10mm x 10mm, 25mm x 25mm and 38mm x 38mm substrates.

Found in 1990, PAM-XIAMEN develops crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. It has been involved in GaN research since 2001, and since 2009 it has been mass producing GaN epitaxy on sapphire substrates as well as free-standing GaN single-crystal substrates, for applications including ultra-high-brightness (UHB)-LEDs and laser diodes (LDs). Using hydride vapour phase epitaxy (HVPE) growth technology, PAM-XIAMEN currently offers low-defect-density native (free-standing) GaN in customer-defined orientation including polar (c-plane Ga-face or N-face) and non-polar (a-plane and m-plane) GaN and AlN templates grown on sapphire and silicon or silicon carbide (SiC) substrates, as well as ultra-high-purity polycrystalline GaN.

“We are pleased to offer larger native SI GaN to our customers including many who are developing better and more reliable high-frequency, high-power GaN transistors,” says the firm’s Dr Shaka. “Our 50mm-diameter native SI GaN product has excellent resistivity properties, just like our smaller SI GaN substrates, as corroborated by recent electrical resistivity mapping measurements carried out. The larger size and availability improve our native SI GaN boule growth and wafering processes,” he adds. 

“Our customers can now benefit from the increased device yield expected when developing advanced transistors on a larger square substrate,” says Shaka. “Our larger square SI GaN substrates are natural by products of our ongoing efforts; currently we are devoted to continuously develop round 3-inch and 4-inch native SI GaN substrates.”

PAM-XIAMEN notes that its improved SI GaN product line has benefited from strong technical support from Native University and Laboratory Center.

Tags: Free-standing SI GaN substrate

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