25 July 2012

RFMD launches 0.25W, 50-2700MHz InGaP HBT power amplifier

RF Micro Devices Inc of Greensboro, NC, USA has launched a new single-stage indium gallium phosphide heterojunction bipolar transistor (InGaP HBT) power amplifier (PA) operating at frequencies of 50-2700MHz, designed specifically for wireless infrastructure applications.

The RFPA2089 offers high-gain linear operation (17.6dB gain at 2.65GHz) at a comparably low DC power, suiting next-generation radios requiring high efficiency. Its external matching allows for use across various radio platforms.

Features include: -60dBc adjacent channel power ratio (ACPR) at 13dBm WCDMA; 0.25W of output power at 1dB gain compression point (P1dB); what is claimed to be excellent linearity-to-DC power ratio; single-supply 5V operation; and electrostatic discharge (ESD) protection up to Class 2 (2000V) human body model (HBM).

Applications include driver amplifiers for base-station transceivers; PA stages for commercial wireless infrastructure; IF amplifiers; and 2G, 3G and LTE transceiver applications.

Pricing begins at $1.84 each for 750-unit quantities.

Tags: RFMD InGaP HBT PA

Visit: www.rfmd.com