26 June 2012

Taiwan’s National Chung Hsing University to use Aixtron CCS MOCVD system for GaN-on-Si research

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that new customer National Chung Hsing University (NCHU) in Taiwan has placed an order for a Close Coupled Showerhead (CCS) MOCVD system in 3x2”-wafer configuration.

NCHU will use the system for research into hetero-epitaxial growth of gallium nitride alloys on silicon wafers (GaN-on-Si). One of Aixtron’s local service support teams has already installed and commissioned the new reactor in a dedicated cleanroom facility at NCHU’s site in Taichung.

“The reactor has demonstrated its versatility, ease of operation and reproducibility over the range of parameters of interest to us,” says professor Horng of the Graduate Institute of Precision Engineering at NCHU. “We therefore will be able to produce high-quality GaN-on-Si epilayers and other novel structures”, he adds.

Since 2001, the research team leaded by professors Wuu and Horng at NCHU has developed many unique LED technologies for both GaN and AlGaInP materials. Their integrated laboratory (from epitaxial growth to device processing and packaging) has now established itself as one of the leading research center in Taiwan, says Aixtron. Many of its academic-industry cooperation projects have also been awarded by the National Science Council of Taiwan.

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Tags: Aixtron MOCVD GaN-on-Si

Visit: www.nchu.edu.tw

Visit: www.aixtron.com