13 June 2012

Cree releases PDK update for GaN-on-SiC HEMT foundry via Agilent’s ADS software

Cree Inc of Durham, NC, USA has released an updated process design kit (PDK) based on Agilent Technologies’ Advanced Design System (ADS) software that will provide microwave and RF design engineers with a comprehensive suite of design and simulation tools for developing gallium nitride-on-silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) devices. The free PDK integrates the latest version of Agilent’s ADS electronic design automation (EDA) software with Cree’s GaN-on-SiC process technology parameters and design rules, so engineers can now develop monolithic microwave integrated circuits (MMICs) more quickly.

“The latest version of this PDK enables RF design engineers to access the Cree GaN-on-SiC MMIC foundry capabilities through Agilent’s 2011 release of ADS,” says Jim Milligan, director, Cree RF and microwave. “This integrated front-to-back design system provides highly accurate, scalable nonlinear models, parametric layout cells, design rule checking, seamless layout interoperability and a streamlined design cycle to help accelerate time-to-market for our customers,” he adds.

“Our mutual customers now have access to Cree’s proven GaN-on-SiC MMIC process technology, along with the Agilent integrated design system, which is uniquely suited to producing reliable, leading-edge, high-power HEMT devices for today’s most challenging applications,” claims Juergen Hartung, foundry program manager, Agilent EEsof EDA.

To demonstrate the new PDK, the two firms are hosting a special joint workshop on 20 June (10am– noon) at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada, that will enable RF design engineers to experience several different MMIC design examples using the new Cree/Agilent PDK.

Tags: Cree GaN-on-SiC HEMT Agilent PDK

Visit: www.cree.com/rf

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