12 June 2012

RFMD launches 400-2700MHz GaAs HBT linear PA for wireless infrastructure

RF Micro Devices Inc of Greensboro, NC, USA has launched the RFPA1012 linear power amplifier, designed specifically for wireless infrastructure applications.

Using a gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) fabrication process, the single-stage amplifier operates on low DC power (5V, 90mA), and has high linearity (OIP3 = 44dBm at 900MHz). It also achieves a high IP3/DC power ratio that operates over a broad frequency range of 400-2700MHz.

The linear PA also offers a low noise figure (NF = 3.5dB at 900MHz), suiting second- and third-stage low-noise amplifiers (LNAs). Other applications include GaAs pre-drivers for base-station amplifiers, and Class AB operation for DCS, PCS, UMTS and WiFi transceiver applications.

The RFPA1012 is currently available in production quantities. Pricing begins at $2.76 each in 100-unit quantities.


Visit: www.rfmd.com

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