15 June 2012

RFMD showcasing RF components at IMS 2012

In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17-22 June), RF Micro Devices Inc of Greensboro, NC, USA is showcasing its broad portfolio of products and technologies for the wireless and wired broadband markets.

RFMD is exhibiting products serving a wide range of end-markets, including: gallium nitride (GaN) power, point-to-point microwave radio, WiFi, wireless infrastructure, and smart energy AMI/ZigBee. It will also introduce its 2012-2013 Product Selection Guide, which features about 900 products, including more than 80 recently released products.

GaN-based products on display include new high-power transistors and ICs. In particular, booth demonstrations feature a new 25W GaN broadband power IC and a new GaN high-power RF switch. RFMD is also showcasing its point-to-point product portfolio for wireless backhaul applications, with monolithic microwave integrated circuits (MMICs) operating at 10-20GHz, including up-converters, down-converters, MMIC voltage-controlled oscillators (VCOs), and power amplifiers.

For the 2.4GHz and 5GHz WiFi markets, RFMD is promoting several new front-end products supporting smart-phones, wireless networking, computing, tablets, gaming consoles, printers, home automation, and automotive applications. For wireless infrastructure and general-purpose RF applications, the firm will display an expanded portfolio of variable gain amplifiers (VGAs), multi-stage low-noise amplifiers (LNAs), high-linearity power amplifiers (PAs), and attenuator products.

RFMD representatives are also presenting papers, chairing sessions, and hosting proceedings throughout the Microwave Week 2012 technical program at IMS.

Tags: RFMD

Visit: http://ims2012.org

Visit: www.rfmd.com

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