18 June 2012

RFMD adds 280W GaN matched power transistor family, targeting pulsed-radar

RF Micro Devices Inc of Greensboro, NC, USA has launched the RFHA1025, a highly efficient 280W pulsed gallium nitride (GaN) RF matched power transistor that delivers superior performance versus competing silicon power technologies, it is claimed.

The RFHA1025 complements the recently released 380W RF3928B, the highest-output-power S-band device in RFMD’s matched power transistor family. The firm says that it is expanding its portfolio of GaN-based power amplifier transistor products across bands, aiming to boost its position in the radar market.

RFMD says that its GaN matched power transistors extend range, reduce size and weight, and improve overall ruggedness in radar architectures. The RFHA1025 operates over a broad frequency range (0.96-1.2GHz) and delivers 280W pulsed power, high gain (>14dB) and high peak efficiency (>55%). Also, it incorporates internal matching to simplify and shrink designers’ circuits. Packaged in a hermetic, flanged ceramic package, the RFHA1025 leverages RFMD’s advanced heat-sink and power dissipation technologies, delivering what is claimed to be excellent thermal stability and conductivity. The firm’s RF393x unmatched power transistors (UPT) can be used as drivers to the RFHA1025.

“We look forward to introducing additional GaN devices in the near term that feature superior power density, high power efficiency, and rugged dependability,” says Jeff Shealy, general manager of RFMD’s Power Broadband business unit.

RFMD is exhibiting its GaN power portfolio in booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17–22 June).

Tags: RFMD GaN GaN power transistor

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