19 June 2012

RFMD adds power amplifiers for high-frequency point-to-point radio

In booth 1210 at the IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17-22 June), RF Micro Devices Inc of Greensboro, NC, USA has launched three new power amplifiers (PAs) for high-frequency point-to-point radio applications. The RFPA1002, RFPA1003 and RFPA1702 deliver RF output power of more than 1W in the 10-20GHz frequency bands and expand the firm’s portfolio of radio chipsets targeting cellular backhaul and other markets.

By delivering what is reckoned to be exceptional power output, linearity and gain, the RFPA1002, RFPA1003, and RFPA1702 help to satisfy the increasing capacity and performance requirements of next-generation point-to-point radio systems, the firm says. Each of the high-frequency gallium arsenide (GaAs) PAs is housed in a 6mm x6mm QFN package, combining low-cost packaging with what is claimed to be industry-leading electrical performance.

In addition to the point-to-point radio market, the RFPA1002, RFPA1003 and RFPA1702 are suited to satellite communications, military radar and electronic warfare (EW) applications. RFMD’s expanding portfolio of microwave radio chipsets also includes upconverters, downconverters, voltage-controlled oscillators (VCOs) and gain blocks.

Tags: RFMD GaAs PAs

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