20 June 2012

Toshiba adds gain- and efficiency-optimized C-band GaAs FET PAs for microwave radio and BUCs

In booth 710 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (19-21 June), Toshiba America Electronic Components Inc (TAEC) and its parent company Toshiba Corp of Tokyo, Japan have announced the expansion of its gallium arsenide field-effect transistor (GaAs FETs) lineup with the addition of two power amplifiers (PAs) optimized for power-added efficiency, targeted at microwave radios and block up-convertors (BUCs).

The new C-band GaAs FETs for microwave digital radios support point-to-point and point-to-multipoint terrestrial communications, and the BUCs support satellite communications. Operating in the 5.3-5.9GHz and 5.9-6.4GHz ranges, respectively, the TIM5359-16EL and TIM5964-16EL have an output power at 1dB gain compression point (P1dB) of 16W, or 42.5dBm (typical), linear gain at 1dB gain compression point (G1dB) of 11.5dB (typical), and power-added efficiency of 38%.

“High gain and high power-added efficiency features will help designers build energy-efficient microwave radios,” says Homayoun Ghani, business development manager, microwave devices, for TAEC’s Discrete business unit. “By combining our new 16W product along with the linearity-enhanced broadband C-band 4W microwave monolithic integrated circuit (MMIC), Toshiba’s TMD0608-4, a simple two-chip design solution is provided for microwave radio applications,” he adds. “The improved gain will help microwave designers reduce the number of parts in their overall system.”

Samples of the high-gain GaAs FET family are available now.

Tags: Toshiba GaAs FET PAs

Visit: www.toshiba.com/taec

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