20 June 2012

Toshiba launches Ka-band high-power GaN MMIC for satcoms

Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has announced a Ka-band high-power gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) with what it claims is one of the highest power and efficiency performances in its class. Targeted at satcom applications such as high-definition video broadcast and broadband data communication, the firm plans to release a complete family of Ka-band products to support these applications.

Ka-band satcom has been on the rise, and is continuing to show steady growth to support broadband communication and increasing demand for higher bandwidth in satcom frequencies, says Toshiba.

Due to the limited availability of high-power microwave solid-state devices, replacing tube-based amplifiers with solid-state power amplifiers (SSPA) for the Ka-band has previously not been a cost-effective design option. However, Toshiba says that its new Ka-band MMIC will provide a solution to support the anticipated surge of solid-state amplifiers to the millimeter-wave frequency range for satcom applications.

Target specifications for the Ka-band high-power GaN MMIC include an operating frequency range of 29.0-31.0GHz, output power P(out) of 15W, linear gain GLof 15dB, and power efficiency of 20% (typical).

“As a longtime supplier of high-performance GaN and gallium arsenide microwave devices for wireless applications in various frequency bands, Toshiba plans to continue efforts to expand the product line with new solutions,” says Homayoun Ghani, business development manager, microwave devices, for TAEC's Discrete business unit.

A datasheet for the new MMIC will be available in Q4/2012, with sampling beginning in Q1/2013.

Tags: Toshiba GaN MMIC Satcoms

Visit: www.toshiba.com/taec