21 June 2012

TriQuint samples 400-2700MHz LNAs with highly linear noise performance while cutting design complexity and cost

At the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17-22 June), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced initial sample availability of two surface-mount low-noise amplifiers (LNAs) - based on the firm’s GaAs E-pHEMT process - that deliver the lowest noise figure of any integrated, packaged solutions for base-station and similar applications, it is claimed.

The TQP3M9036 operates at 400-1500MHz with 19dB gain at 900MHz, a noise figure of 0.45dB, +35dBm OIP3 linearity, and +20dBm P1dB RF output. The TQP3M9037 operates from 1500-2700MHz with 20dB gain at 1900MHz, a noise figure of 0.40dB, +36dBm OIP3 linearity, and +21dBm P1dB RF output. With +22dBm overdrive capability, both devices are suited to infrastructure applications such as cellular base stations, tower-mounted amplifiers (TMAs), small-cell wireless networks, repeaters, 700MHz LTE networks, and emerging wireless systems using ‘white spaces’ in the UHF spectrum.

TriQuint says that its new solutions simplify RF design by integrating key functions on-chip and within the package that are typically performed by external components. They also address the growing TDD-LTE market with integrated digital shut-down biasing capability and can deliver high performance from bias voltages of +3-5V without a negative supply voltage. The biasing network maintains stability over temperature through a current mirror and resistive feedback; it also provides the switching circuit for the digital power-down function. The firm adds that its new LNAs have been optimally configured on-chip to provide the best combination of noise figure, linearity and reliability.

Both thenew devices are pin-compatible with similar products in TriQuint’s portfolio and are housed in industry-standard, RoHS-compliant 2mm x 2mm, 8-lead DFN packages. They are extremely rugged and can block high-power interfering input signals or transmit power leakages greater than +22dBm. The devices are also unconditionally stable to eliminate potential oscillations. Both are internally matched to 50Ω and do not require any external matching circuitry for operation.

Initial samples are available now, and production volumes will be available in September.

Tags: TriQuint LNAs

Visit: www.triquint.com

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