30 March 2012

Opto Diode launches 110mW 850nm GaAlAs IR LEDs

Opto Diode Corp of Newbury Park, CA, USA (a division in the Photonics Group of ITW) has launched the first in a new series of super high-power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters. The OD-110L features high optical output with a very narrow optical beam, suiting night vision (NV) and other military imaging applications.

The OD-110L is housed in a standard three-lead, hermetically sealed TO-39 package to accommodate the small-size (0.026-inches x 0.026-inches) chip. There are four wire bonds on die corners, and all surfaces are gold-plated for added durability. Typically, the total power output (at 25°C) is 110mW and the minimum output is 55mW, with peak emission at a wavelength of 850nm.

The absolute maximum rating at 25°C (case temperature) for power dissipation is 1000mW, with a continuous-forward-current rating at 500mW. The OD-110L lead-soldering temperature (1/16-inches from the case for 10 seconds) is 260°C. The storage and operating temperatures range from -40°C to 100°C, making the devices suitable for harsh environments and for integration into illuminators and markers, as well as systems using NV goggles and cameras.

Tags: Opto Diode GaAlAs IR LEDs

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