16 March 2012

Infineon orders Tokyo Electron epi growth tool to mass produce SiC power devices

Tokyo Electron Ltd (TEL) says that Germany’s Infineon Technologies has ordered its Probus-SiC silicon carbide epitaxial film growth system for the mass production of SiC power devices.

The Probus-SiC can handle film growth on substrates up to 6 inches in diameter. It also features automatic transfer and multi-reactor functions, and has been evaluated as being suitable for improving device performance and productivity, says TEL. The system is scheduled to be delivered this summer.

“In order to ensure the stable performance required for mass production, the Probus-SiC incorporates key design and development concepts to achieve good uniformity, low defect density, reduced surface roughness, high throughput and easy operability,” says Yoichi Ishikawa, general manager of TEL’s New Product Development Division. “With Infineon Technologies’ validation of the Probus-SiC performance and design, TEL is looking forward to the opportunity to contribute to low-cost manufacturing of high-quality SiC power devices and the further expansion of the SiC power device market,” he adds.

Tags: Tokyo Electron SiC

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