19 March 2012

TriQuint to report R&D on E/D-mode InAlN/GaN devices and GaN X-band amplifiers at GOMACTech

At the 2012 Government Microcircuit Applications and Critical Technology Conference (GOMACTech 12) in Las Vegas this week (19-22 March), researchers from RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA are presenting papers highlighting gallium nitride (GaN) advances.

Presentations detail enhancement/depletion (E/D)-mode indium aluminium nitride/gallium nitride (InAlN/GaN) devices that deliver record high-frequency performance in DARPA-funded programs.

Integrated GaN X-band amplifiers will also be explored. TriQuint’s new GaN X-band paper reports how its researchers have integrated RF matching and bias circuits in a 66W high-efficiency GaN solution.

The firm also claims that its R&D programs set new standards while also enabling a wide selection of design-ready GaN products for commercial and defense applications.

TriQuint’s provides a full range of field-effect transistors (FETs), monolithic microwave integrated circuits (MMICs), packaged transistors, and high-power RF switches, as well as foundry services. In addition to GaN- and GaAs-based devices, the firm also provides surface acoustic wave (SAW) and bulk acoustic wave (SAW) devices.

Tags: TriQuint E/D-mode InAlN/GaN GaN X-band amplifiers

Visit: www.triquint.com

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