8 May 2012

University of Warsaw adds Aixtron CCS Reactor for GaN research

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in fourth-quarter 2011 it received an order from the University of Warsaw, Poland for a Close Coupled Showerhead (CCS) metal-organic chemical vapor deposition (MOCVD) reactor in a 3x2-inch wafer configuration, to be used for the growth of gallium nitride (GaN) materials.

The system will be delivered in second-half 2012 as part of a project co-financed by the European Union titled ‘Physics as the basis for new technologies – development of modern research infrastructure at the Faculty of Physics of the University of Warsaw’. Aixtron Europe's service support team will install and commission the system at a dedicated cleanroom in the faculty’s Institute of Experimental Physics.

“There are few systems that possess such a good all-round combination of characteristics,” says professor Roman Stepniewski of the the CCS reactor. “It is a very stable platform, optimized for the growth of nitride thin films for a range of requirements, and comes with excellent reliability, ease of use and reproducibility,” he adds.

“Professor Stepniewski’s team has a worldwide reputation for the quality of their work in advanced semiconductor materials, in particular in growth technology and basic studies of nitrides,” comments Dr Frank Schulte, vice president Aixtron Europe. “Like many other research groups, they will quickly find the CCS to be not only a robust route to uniformity and scalability, but also an ideal and sustainable solution for their needs,” he reckons.

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Tags: Aixtron MOCVD GaN

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