21 May 2012

EPC appoints David Reusch as director Applications Engineering

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, says that Dr David Reusch has joined its engineering team as director, Applications Engineering.

As a member of the EPC applications team, Reusch’s focus will be on designing lower-loss and higher-power-density benchmark circuits that demonstrate the benefits of using GaN transistors. His initial focus will be on their use in higher-voltage DC-DC converters and resonant, soft-switching converters. Reusch’s research and experience in these applications will be shared with customers to accelerate their designs using high-performance eGaN FETs. EPC says that his designs will demonstrate GaN transistors' superior performance over silicon MOSFETs.

Reusch earned a doctorate in electrical engineering from the Virginia Polytechnic Institute and State University (Virginia Tech), where he also earned his bachelor’s and master’s degrees. While working on his Ph.D. he was a National Science Foundation (NSF) Fellow at the Center for Power Electronics Systems (CPES).

Reusch is active in IEEE organizations and, during the last several years, has published papers at the Applied Power Electronics Conference (APEC) and the Energy Conversion Congress and Exposition (ECCE). In addition, he has first-hand experience designing with GaN transistors to meet the demands for lower loss and higher power density in power converters, notes EPC.

Tags: EPC E-mode GaN FETs

Visit: www.epc-co.com

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