7 May 2012

GE expands for SiC product development

GE Aviation (an operating unit of GE) has expanded its location in Pompano Beach, FL, USA, which was established in 1965 and whose 40 staff design and manufacture special application electronic power subsystems for military and other ‘high-end’ applications.

The new facility (at 2705 Gateway Drive) includes a 30% increase in area (to 30,000 square feet) and an R&D lab capable of developing silicon carbide (SiC)-based power conversion products for air, land and sea-based platforms.

“This new facility enables us to continue work on GE-developed SiC technology, with the potential of reducing the weight on an aircraft by more than 400 lbs,” says Vic Bonneau, president of Electrical Power for GE Aviation Systems. “GE is committed to Florida and is investing approximately $20m in program work and R&D related to our Pompano Beach facility over the next five years,” he adds.

A new lab in the facility will provide increased capacity for developing, testing and manufacturing advanced electrical power conversion products used on civil and military platforms.

Space and weight are premiums on aircraft, says GE. Airlines are constantly trying to balance the need to create more passenger and storage space, while also meeting increased demand for electrical power on the plane. GE’s SiC power devices aim to address this need on both fronts.

“An important part of our strategy is to aggressively invest in the kinds of technologies that will solve large problems for our customers 10 year from now,” comments Bonneau.

Tags: GE Aviation SIC SiC power devices

Visit: www.ge.com/aviation