24 May 2012

NXP and Singapore’s A*STAR to co-develop 200mm GaN-on-Si power devices

The Institute of Microelectronics (IME), a research institute of Singapore’s Agency for Science, Technology and Research (A*STAR), and NXP Semiconductors N.V. of Eindhoven, The Netherlands, which provides mixed-signal and standard semiconductor products, have entered into research collaboration to develop a 200mm gallium nitride-on-silicon (GaN-on-Si) process and technology for high-voltage power devices to deliver highly efficient energy solutions in end applications such as computing and communications, aerospace and automotive applications.

The IME and NXP team will collaborate on the development of process technologies for the manufacturing of GaN devices on 200mm wafers, which is expected to bring about a considerable reduction in manufacturing cost compared to using smaller-size wafers. The work will be carried out in IME’s 200mm engineering fab, which has GaN metal-organic chemical vapour deposition (MOCVD) capabilities for the production of GaN wafers.

“IME’s GaN-on-Si research program can play a vital role in helping our partners achieve commercial success in GaN power electronics,” says professor Dim-Lee Kwong.

“This collaboration is an important step in our strategy to address the need for dramatically improved efficiency in power conversion through innovative engineering solutions,” says Dr Michael Bolt, director NXP Research Asia Lab.

Gallium nitride is used as the key material for next-generation high-frequency, high-power transistors capable of operating at high temperatures. GaN-on-Si offers the key advantages of combining high operation voltage, high switching speed, low loss, and high integration level, on large-diameter Si wafers, says NXP. The CMOS-compatible device process - which leverages the economics of scale and compatibility with high-throughput and high-capacity 200mm Si-based wafer process technology - offers the opportunity for cost-efficient volume production, the firm concludes.

Tags: NXP A*STAR GaN-on-Si power devices MOCVD

Visit: www.ime.a-star.edu.sg

Visit: www.nxp.com

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