16 November 2012

Integra launches two GaN-on-SiC HEMTs for S-band radar

Integra Technologies Inc of El Segundo, CA, USA, which supplies high-power pulsed RF transistors, has launched two internally pre-matched, gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) designed for S-band radar applications.

The IGN2729M500 operates over the 2.7-2.9GHz instantaneous frequency band. Under 300µs pulse width and 10% duty-cycle pulsing conditions, it supplies a minimum of 500W of peak output power with typical performance of 560W, typically 12dB gain and over 60% efficiency. The device is rated for peak output power of 500W with 10% duty factor and average power of 50W.

The IGN3135M130 operates over the 3.1–3.5GHz instantaneous frequency band. Under 300µs pulse width and 20% duty-cycle pulsing conditions, it supplies a minimum of 130W of peak output power with typical performance of 150W with 12dB gain. The device is rated for peak output power of 130W with 20% duty factor and average power of 26W.

Specified operation is with Class AB bias. When appropriately rated, the new GaN HEMTs are operable under a wide range of pulse widths and duty factors. All devices are 100% screened for large-signal RF parameters in a fixed tuned broadband matching circuit/test fixture.

Tags: Integra GaN-on-SiC HEMT S-band radar

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