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13 November 2012

RFMD launches family of linear GaN power transistors

Following the previous release of the RF393X series of unmatched power transistors (UPTs) targeting continuous wave (CW) and pulsed peak power applications, RF Micro Devices Inc of Greensboro, NC, USA has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs): the RFHA3942 (35W) and the RFHA3944 (65W).

The new series of linear GaN discrete amplifiers is optimized for broadband applications requiring linear back-off operation or reduced spurious performance. RFMD plans further releases of 10W and 95W linear GaN devices over the next 12 months, expanding the GaN UPT options available.

RFMD’s highly linear GaN UPTs target new and existing communication architectures requiring improved broadband linear performance in support of high peak-to-average modulation waveforms. The RFHA3942 and RFHA3944 are tunable over a broad frequency range (DC to 4GHz) and provide CW peak power of 35W and 65W, respectively. They also offer high gain of 15dB and high peak efficiency of > 55%. Using an IS95 9.8dB PAR (peak-to-average energy ratio) signal tuned to 2.1GHz, the RFHA3942 achieves -43dBc adjacent channel power (ACP) at a power outout (POUT) of 34dBm and the RFHA3944 achieves -54dBc ACP at 37dBm POUT.

Additionally, the RFHA3942 and RFHA3944 offer high terminal impedance at the input and output of the package, enabling wideband gain and power performance advantages in a single amplifier. The devices are packaged in a flanged ceramic two-leaded package that leverages RFMD’s heat-sink and power-dissipation technologies to deliver good thermal stability and conductivity.

RFMD is showcasing its portfolio of RF components in stand #A4.134 at the Electronica 2012 trade show in Munich, Germany (13-16 November).

Tags: RFMD GaN power transistor


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