13 November 2012

RFMD unveils series of 3V LTE linear power amplifier modules

RF Micro Devices Inc of Greensboro, NC, USA says that the components in its new RF73xx series of high-power, high-efficiency linear power amplifiers are designed for use as the final amplification stage in 3V, 50Ω LTE mobile cellular equipment developed for E-UTRAN/LTE band operation.

Developed for 5-20MHz LTE channel bandwidths, the products and their frequency-band coverage are as follows: the RF7303 (multi-mode: LTE/UMTS 3, 4, 9, and 10; CDMA 15); the RF7317A (LTE 17); the RF7320 (LTE 20); and the RF7321 (LTE 11 and 21).

Each device has two digital control pins to select one of three power bias states to optimize performance and current drain at lower power levels, boosting LTE efficiency. The 10-pin, 3mm x 3mm x 0.8mm module also contains an integrated directional power coupler (eliminating the need for an external discrete coupler at the output) and integrated blocking and decoupling capacitors. Features include optimized use with DC-DC converter operation.

Applications include LTE wireless handsets and datacards. The products are currently available in production quantities.

Tags: RFMD LTE

Visit: www.rfmd.com