29 October 2012

BluGlass' RPCVD grown GaN layers demonstrate reduced levels of key impurities

BluGlass Ltd of Silverwater, Australia says it is now able to produce gallium nitride (GaN) with industry standard impurity levels using its low temperature remote-plasma chemical vapor deposition (RPCVD) technology. The RPCVD grown GaN layers demonstrate reduced levels of key impurities (carbon, hydrogen and oxygen) on par with the industry standard process, metal-organic chemical vapor deposition (MOCVD), adds the firm.

Impurity levels were measured by Evans Analytical Group (EAG), an independent, global materials characterisation company, using secondary-ion mass spectrometry (SIMS). EAG confirmed that BluGlass has demonstrated carbon, oxygen and hydrogen impurities at levels less than 1x1017 atoms per cm3.

BluGlass now aims to optimise the p-GaN layer in order to show the advantages of RPCVD to customers, including improved LED device efficiency over the current industry standard MOCVD produced devices.

“This achievement is a breakthrough for the company and is a critical step in proving to the industry and future customers the potential of our technology,” says BluGlass CEO Giles Bourne. “Carbon and oxygen are well known inhibitors of RPCVD, and their reduction will be viewed by the industry as a significant achievement. These reductions in impurities will greatly assist BluGlass in achieving its technical and commercial milestones.”

Tags: BluGlass RPCVD GaN

Visit: www.bluglass.com.au