4 September 2012

Cree introduces low basal plane dislocation 4H SiC epitaxial wafers

Cree Inc of Durham, NC, USA has introduced low basal plane dislocation (LBPD) 100-mm 4H silicon carbide (SiC) epitaxial wafers. This LBPD material exhibits a total BPD density of 1 cm-2 in the epitaxial drift layer, with BPDs capable of causing Vf drift as low as  0.1 cm-2, says Cree. 

“Bipolar devices in SiC have long been held back by forward voltage degradation caused by the presence of BPDs,” said John Palmour, CTO, Cree Power & RF. “This Low BPD material enables very high voltage bipolar devices such as IGBTs (insulated-gate bipolar transistors) and GTOs (gate turn-off thyristor) to have improved stability over time. This recent development helps remove roadblocks to commercialization of these extremely high power devices.”

Low BPD epitaxial wafers are available for purchase immediately. For details, contact the Cree Materials Sales team at Materials_Sales@cree.com.

See related items:

Cree launches 150mm 4HN SiC epiwafers

Tags: Cree SiC epiwafers

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