3 September 2012

EPC releases safe operating area data for its eGaN FETs

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, is releasing safe operating area (SOA) data for its eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature, says the firm.

SOA is an indicator of the device’s ability to transfer heat away from a resistive junction.  The more efficient a device is at getting rid of generated heat, the lower thermal resistance and the better the SOA performance.

An application note presenting the SOA for EPC eGaN FETs is available at: http://epc-co.com/epc/documents/product-training/SafeOperatingArea.pdf  

EPC is in the process of updating each of its product data sheets to include SOA performance curves.

Tags: EPC E-mode GaN FETs

Visit: www.epc-co.com

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