13 September 2012

Transphorm introduces JEDEC qualified 600V GaN HEMT

Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has announced the JEDEC qualification of its TPH2006PS gallium nitride (GaN) HEMT on silicon carbide (SiC) substrate, claiming it as the first qualified 600V HEMT device.

Based on Transphorm’s patented, high-performance EZ-GaN technology, TPH2006PS combines low switching and conduction losses resulting in reduced energy loss of up to 50% compared to conventional silicon-based power conversion designs, says the firm. The TO-220-packaged device features RDS(on) of 150mΩ, Qrr of 42nC and high frequency switching capability that enables compact, lower cost systems.

"Our team has accomplished the first qualification of a 600V GaN transistor product, allowing our customer-partners to now introduce energy saving products, Powered-by-Transphorm", said Primit Parikh, president of Transphorm. "This development also lays to rest any doubts that high voltage GaN transistors can indeed be successfully qualified."

Transphorm's technology can be used in a wide variety of electrical systems and devices, including motor drives, power supplies and inverters for solar panels and electric vehicles.

Tags: Transphorm GaN GaN HEMT

Visit: www.transphormusa.com

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