3 September 2012

TriQuint launches 1W and 2W 5V high-linearity driver amplifiers

RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has launched 5V high-linearity driver amplifiers (in lead-free/green/RoHS-compliant, industry-standard packages) with output powers of 1W and 2W, respectively.

Housed in a standard SOT-89 surface-mount package, at 0.9GHz the 1W TQP7M9105 offers 19.4dB of gain, ultra-high linearity of 49dBm OIP3, and +30dBm of compressed 1dB power while drawing a very low current of 220mA. The device suits 3G/4G base-station transceivers, repeaters, defense & aerospace applications, or any other general wireless application in the 50-1500MHz frequency range requiring high linearity.

Housed in a 4mm x 4mm QFN surface-mount package, at 0.9GHz the 2W TQP7M9106 offers 20.8dB of gain, ultra-high linearity of 50dBm OIP3, and +33 dBm of compressed 1dB power while drawing 455mA of current. The device suits 3G/4G small-cell base stations, high-power amplifiers, repeaters, defense communications, or any other general wireless application in the 50-1500MHz frequency range requiring high linearity.

For both devices, internal circuitry allows the amplifier to offer 'Class A' linearity performance with 'Class AB' efficiency. The TQP7M9106 contains added patented features implemented on-chip that differentiate it from other products on the market, it is claimed. The amplifier contains RF overdrive protection, allowing the device to be very rugged. The internal active bias allows it to operate off of a 5V supply but also provides DC over-voltage protection. This protects the amplifier from electrical DC voltage surges and high RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 1C HBM ESD rating.

Tags: TriQuint Driver amplifiers

Visit: www.triquint.com