CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

20 May 2013

Bridgelux closes agreement with Toshiba, completing transfer of GaN-on-Si technology

LED chip and lighting array maker Bridgelux Inc of Livermore, CA, USA has closed an agreement with Tokyo-based semiconductor manufacturer Toshiba Corp (announced on 22 April), which aims to strengthen and extend their strategic technology collaboration.

The firms have now completed the transfer of Bridgelux’s gallium nitride-on-silicon (GaN-on-Si) technology assets to Toshiba and inaugurated the new phase of GaN-on-Si LED collaboration, including an expanded licensing and manufacturing supply relationship. Bridgelux will continue to develop and market its GaN-on-sapphire LED products as a fabless solid-state lighting company.

“As we outlined last month, Bridgelux will focus on commercializing, productizing and bringing to market GaN-on-silicon technologies alongside a proven global scale semiconductor manufacturer,” says Bridgelux’s CEO Brad Bullington. “At the same time, we remain committed to our GaN-on-sapphire business.”

See related items:

Bridgelux sells GaN-On-Si LED technology/chip-related assets to Toshiba as it focuses on lighting products

Toshiba invests in Bridgelux to boost GaN-on-Si LED lighting

Tags: Bridgelux GaN-on-Si LEDs



See Latest IssueRSS Feed