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8 November 2013

TriQuint adds GaN transistors with Modelithics design support to speed production while improving performance

RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced five new second-generation gallium nitride (GaN) transistors with companion non-linear RF models from Modelithics Inc of Tampa, FL, USA, which provides active and passive simulation models for electronic design automation (EDA) using RF, microwave and millimeter-wave devices. The new devices and companion models enable quicker, more accurate performance testing, which speeds production readiness and manufacturing for commercial and defense RF applications, says TriQuint.

The firm’s new GaN field-effect transistors (FETs), with output power up to 90W, offer enhanced power-added efficiency (70% PAE or greater) and wideband frequency coverage (DC-18GHz). Enhanced efficiency and greater power density can reduce the number of transistors in amplifier designs while improving overall performance through reduced combining loses, says TriQuint.

The new GaN FETs include TGF2023-2-01, TGF2023-2-02, TGF2023-2-05, TGF2023-2-10 and TGF2023-2-20. The new non-linear modeling library was created by Modelithics. The two firms aim to expand the TriQuint GaN library in the coming months.

TriQuint’s new models are available for download from Modelithics and are compatible with the industry’s most popular design software including Agilent ADS and National Instruments/AWR applications. Advanced features include scaling of operating voltage, ambient temperature and self-heating effects, as well as intrinsic voltage/current node access for waveform optimization.

Tags: TriQuint EDA Modelithics

Visit: www.modelithics.com/mvpTriQuint.asp?comp_id=Triquint&tab=3

Visit: www.triquint.com

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