24 October 2013

Hittite adds 10W, 6-18GHz PA to GaN MMIC product line

Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has launched a gallium nitride (GaN) MMIC power amplifier (PA) that is claimed to offer significant performance, size and durability advantages for communications, test instrumentation and radar systems operating in the 6-18GHz frequency range.

The HMC7149 is a 10W GaN MMIC PA that typically provides 20dB of small-signal gain and +40dBm of saturated output power. It draws 680mA quiescent current from a +28V DC supply and features RF I/Os that are matched to 50 Ohms for ease of use.

The PA also offers high-output-power capability, a compact die size and simplified biasing, which make it suitable for integration into high-power-density multi-chip module (MCM) and subsystem applications.

The HMC7149 is Hittite’s fifth GaN MMIC amplifier to be launched during 2013, following the 2-6GHz, 25W HMC1086, HMC1086F10 and 2-20GHz, 8W HMC1087 and HMC1087F10 power amplifiers (launched in July). All five GaN MMIC PAs complement Hittite’s line of microwave power amplifiers, which provides continuous frequency coverage from 0.01GHz to 86GHz.

See related items:

Hittite launches GaN MMIC power amplifiers delivering 25W at 2-6GHz and 8W at 2-20GHz

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Visit: www.hittite.com