19 September 2013

EPC expands eGaN FET family with 150V, 25milliOhm power transistor

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2018 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs).

The EPC2018 is a 5.76mm2, 150VDS, 12A device with a maximum RDS(on) of 25milliOhms with 5V applied to the gate. The GaN power transistor delivers high performance due to its ultra-high switching frequency, extremely low RDS(on), low gate charge QG (5nC typical, 7.5nC maximum), all in a very small 3.6mm x 1.6mm LGA package.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has many times superior switching performance, says EPC. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, and other circuits needing nanosecond switching speeds.

“The low on-resistance, low output capacitance, fast switching, and no reverse recovery reduce the switching losses in power conversion applications and allow for higher efficiency and improved sound quality in Class D audio applications,” says co-founder & CEO Alex Lidow.

In 1000-piece quantities, the EPC2018 is priced at $6.54 and is available through distributor Digi-Key Corp.

See related items:

EPC expands eGaN FET family with 100V, 16milli-Ohm power transistor

Tags: EPC E-mode GaN FETs

Visit: http://epc-co.com/epc/Products/eGaNFETs/EPC2018.aspx

Visit: http://digikey.com