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29 April 2014

MACOM launches 55W GaN-on-SiC pulsed power transistor with 55% PAE up to 3.5GHz

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) HEMT pulsed power transistor for civilian and military radar pulsed applications.

The MAGX-000035-045000 is a gold-metalized unmatched GaN-on-SiC RF power transistor optimized for high-performance RF applications such as L-band and S-band radar. Operating from a supply voltage of 50V, it provides typical peak output power of 55W with 11.3dB of power gain and 55% power-added efficiency (PAE). Load mismatch stability (VSWR-S) is 5:1 and load mismatch tolerance (VSWR-T) is 10:1. The device is assembled in a small 20.3mm x 5.8mm Cu/Mo/Cu flanged ceramic package, enabling higher power and efficiency for demanding applications.

Operating in the DC-3500 MHz frequency range, the MAGX-000035-045000 is a highly robust transistor with high voltage breakdown and a mean time to failure (MTTF) of 600 years. “The new GaN power transistor offers a versatile and high-performance solution for pulsed driver and power applications over a broad frequency range,” says product manager Paul Beasly. Samples are available from stock.

Tags: M/A-COM GaN RF power transistors

Visit: www.macom.com/gan

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