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5 December 2014

Custom MMIC launches 5-9GHz GaN LNA

Custom MMIC of Westford, MA, USA, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added to its growing line of standard gallium nitride (GaN) products with the CMD218, a 5-9GHz low-noise amplifier (LNA) in die form. 

Gain is 22dB, P1dB (output power at 1dB compression point) is +19.5dBm, and the noise figure is less than 1.25dB across the 5-9GHz frequency range. In addition, without an input limiter, the CMD218 can survive high incident power levels up to 5W with no degradation in performance.

The CMD218 is a 50 ohm matched design, eliminating the need for external DC blocks and RF port matching. In terms of biasing, it can operate from a supply voltage of 5-28V, and typically draws 100mA of quiescent current. A negative gate voltage is required for proper operation.

The LNA is suited to microwave radios and C- and X-band applications where small size and low power consumption are needed. Applications include point-to-point and point-to-multipoint radios, military and space, and test instrumentation.

See related items:

Custom MMIC launches 28-32GHz GaN power amplifier for Ka-band communications

Custom MMIC launches 14-18GHz GaN PA for Ku-band communications

Tags: Custom MMIC MMIC GaN power amplifiers

Visit: www.CustomMMIC.com

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