3 February 2014

EPC introduces high-current development board for 100V EPC2001 eGaN FET featuring four half-bridges in parallel

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9013 development board, featuring the 100V EPC2001 eGaN FET operating up to a 35A maximum output current in Buck mode using a four half-bridge configuration in parallel and a single onboard gate drive. The design increases output power without sacrificing efficiency, says the firm.

The EPC9013 development board is 2” x 2” with eight EPC2001 eGaN FETs in conjunction with the Texas Instruments LM5113 gate driver. It can be operated as a Buck, Boost, or bidirectional, as well as a half-bridge for motor drives and isolated converter applications. Its parallel configuration is recommended for high-current applications. The printed-circuit board layout is designed for optimal switching performance. There are various probe points to facilitate simple waveform measurement and to easily evaluate the eGaN FETs.

EPC says that the development board simplifies the evaluation process of the EPC2001 eGaN FET for high-current operation by including all the critical components on a single board that can be simply connected into any existing converter.

EPC9013 development boards are priced at $150 each and are available from Digi-Key. A Quick Start Guide containing set up procedures, circuit diagram, performance curves and a bill of material is included for reference and ease of use.

Tags: EPC E-mode GaN FETs

Visit: http://epc-co.com/epc/Products/DemoBoards/EPC9013.aspx